Finite Element Modeling of Resistive Switching in Nb 2 O 5 -based Memory Device
A physical electro-thermal model that describes bipolar resistance switching in Nb<inf>2</inf>O<inf>5</inf>-based memory devices is presented based on the finite element method. The switching mechanism is assumed to be controlled by the diffusion and drift of oxygen vacancies in conductive filaments (CFs). The proposed model correctly describes the microscopic morphology of the CF during the gradual reset transition, which provides an in-depth understanding of the operation mechanism in...[Show more]
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