Skip navigation
Skip navigation

Finite Element Modeling of Resistive Switching in Nb 2 O 5 -based Memory Device

Liu, Xinjun; Nandi, Sanjoy; Venkatachalam, Dinesh; Li, Shuai; Belay, Kidane; Elliman, Robert

Description

A physical electro-thermal model that describes bipolar resistance switching in Nb<inf>2</inf>O<inf>5</inf>-based memory devices is presented based on the finite element method. The switching mechanism is assumed to be controlled by the diffusion and drift of oxygen vacancies in conductive filaments (CFs). The proposed model correctly describes the microscopic morphology of the CF during the gradual reset transition, which provides an in-depth understanding of the operation mechanism in...[Show more]

CollectionsANU Research Publications
Date published: 2014
Type: Conference paper
URI: http://hdl.handle.net/1885/61555
Source: COMMAD 2014
DOI: 10.1109/COMMAD.2014.7038711

Download

File Description SizeFormat Image
01_Liu_Finite_Element_Modeling_of_2014.pdf413.58 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  23 August 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator