Temperature Dependence of Threshold Switching in NbOx Thin Films
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Li, Shuai; Liu, Xinjun; Nandi, Sanjoy; Venkatachalam, Dinesh; Elliman, Robert
Description
The threshold switching characteristics of amorphous NbO<inf>x</inf> thin films is investigated with particular emphasis on temperature dependence of the switching characteristics. Threshold switching in this material is believed to result from a thermally-induced insulator-metal-transition (IMT) induced along a filamentary path by local Joule heating. Increasing the operating temperature is shown to lead to a reduction in the resistance of the high-resistance state and to a reduction in the...[Show more]
dc.contributor.author | Li, Shuai | |
---|---|---|
dc.contributor.author | Liu, Xinjun | |
dc.contributor.author | Nandi, Sanjoy | |
dc.contributor.author | Venkatachalam, Dinesh | |
dc.contributor.author | Elliman, Robert | |
dc.date.accessioned | 2015-12-10T23:00:54Z | |
dc.date.created | December 14-17 2014 | |
dc.identifier.isbn | 9781479968671 | |
dc.identifier.uri | http://hdl.handle.net/1885/61541 | |
dc.description.abstract | The threshold switching characteristics of amorphous NbO<inf>x</inf> thin films is investigated with particular emphasis on temperature dependence of the switching characteristics. Threshold switching in this material is believed to result from a thermally-induced insulator-metal-transition (IMT) induced along a filamentary path by local Joule heating. Increasing the operating temperature is shown to lead to a reduction in the resistance of the high-resistance state and to a reduction in the threshold switching voltage. These results are discussed in relation to the transport properties of NbO<inf>x</inf> and the IMT switching model. | |
dc.publisher | IEEE | |
dc.relation.ispartofseries | 2014 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) | |
dc.source | COMMAD 2014 | |
dc.source.uri | http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=7023182 | |
dc.title | Temperature Dependence of Threshold Switching in NbOx Thin Films | |
dc.type | Conference paper | |
local.description.notes | Imported from ARIES | |
local.description.refereed | Yes | |
dc.date.issued | 2014 | |
local.identifier.absfor | 020406 - Surfaces and Structural Properties of Condensed Matter | |
local.identifier.ariespublication | U3594520xPUB619 | |
local.type.status | Published Version | |
local.contributor.affiliation | Li, Shuai, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Liu, Xinjun, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Nandi, Sanjoy, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Venkatachalam, Dinesh, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Elliman, Robert, College of Physical and Mathematical Sciences, ANU | |
local.description.embargo | 2037-12-31 | |
local.bibliographicCitation.startpage | 138 | |
local.bibliographicCitation.lastpage | 140 | |
local.identifier.doi | 10.1109/COMMAD.2014.7038673 | |
local.identifier.absseo | 970102 - Expanding Knowledge in the Physical Sciences | |
dc.date.updated | 2015-12-10T08:25:04Z | |
local.identifier.scopusID | 2-s2.0-84936062124 | |
Collections | ANU Research Publications |
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