Hydrogen in amorphous Si and Ge during solid phase epitaxy
Studies into the effect of hydrogen on the kinetics of solid phase epitaxy (SPE) in amorphous Si (a-Si) and Ge (a-Ge) are presented. During SPE, H diffuses into surface amorphous layers from the surface and segregates at the crystalline-amorphous interface. Some of the H crosses the interface and diffuses into the crystalline material where it either leaves the sample or is trapped by defects. H segregation at concentrations up to 2.3 × 1020 H/cm3 is observed in buried pha-Si layers with the...[Show more]
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|Source:||Thin Solid Films|
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