Skip navigation
Skip navigation

Hydrogen in amorphous Si and Ge during solid phase epitaxy

Johnson, Brett; Caradonna, P; Pyke, D J; McCallum, Jeffrey C; Gortmaker, P

Description

Studies into the effect of hydrogen on the kinetics of solid phase epitaxy (SPE) in amorphous Si (a-Si) and Ge (a-Ge) are presented. During SPE, H diffuses into surface amorphous layers from the surface and segregates at the crystalline-amorphous interface. Some of the H crosses the interface and diffuses into the crystalline material where it either leaves the sample or is trapped by defects. H segregation at concentrations up to 2.3 × 1020 H/cm3 is observed in buried pha-Si layers with the...[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
URI: http://hdl.handle.net/1885/61277
Source: Thin Solid Films
DOI: 10.1016/j.tsf.2009.09.145

Download

File Description SizeFormat Image
01_Johnson_Hydrogen_in_amorphous_Si_and_2010.pdf828.63 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  12 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator