Hydrogen in amorphous Si and Ge during solid phase epitaxy
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Johnson, Brett; Caradonna, P.; Pyke, D. J.; McCallum, Jeffrey C.; Gortmaker, P.
Description
Studies into the effect of hydrogen on the kinetics of solid phase epitaxy (SPE) in amorphous Si (a-Si) and Ge (a-Ge) are presented. During SPE, H diffuses into surface amorphous layers from the surface and segregates at the crystalline-amorphous interface. Some of the H crosses the interface and diffuses into the crystalline material where it either leaves the sample or is trapped by defects. H segregation at concentrations up to 2.3 × 1020 H/cm3 is observed in buried pha-Si layers with the...[Show more]
Collections | ANU Research Publications |
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Date published: | 2010 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/61277 |
Source: | Thin Solid Films |
DOI: | 10.1016/j.tsf.2009.09.145 |
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01_Johnson_Hydrogen_in_amorphous_Si_and_2010.pdf | 828.63 kB | Adobe PDF | Request a copy |
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