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Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing

Gao, Qian; Saxena, Dhruv; Wang, Fan; Fu, Lan; Mokkapati, Sudha; Guo, Yanan; Li, Li (Lily); Wong-Leung, Yin-Yin (Jennifer); Caroff, Philippe; Tan, Hoe Hark; Jagadish, Chennupati

Description

We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally determine a quantum efficiency of μ50%, which is on par w

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
URI: http://hdl.handle.net/1885/61268
Source: Nano Letters
DOI: 10.1021/nl5021409

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