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Top-down Fabrication of High Quality III-V nanostructures by Monolayer Controlled Sculpting and Simultaneous Passivation

Naureen, S; Shahid, Naeem; Sanatinia, Reza; Anand, S

Description

In the fabrication of III-V semiconductor nanostructures for electronic and optoelectronic devices, techniques that are capable of removing material with monolayer precision are as important as material growth to achieve best device performances. A robust chemical treatment is demonstrated using sulfur (S)-oleylamine (OA) solution, which etches layer by layer in an inverse epitaxial fashion and simultaneously passivates the surface. The application of this process to push the limits of top-down...[Show more]

dc.contributor.authorNaureen, S
dc.contributor.authorShahid, Naeem
dc.contributor.authorSanatinia, Reza
dc.contributor.authorAnand, S
dc.date.accessioned2015-12-10T22:58:34Z
dc.identifier.issn1616-3028
dc.identifier.urihttp://hdl.handle.net/1885/60915
dc.description.abstractIn the fabrication of III-V semiconductor nanostructures for electronic and optoelectronic devices, techniques that are capable of removing material with monolayer precision are as important as material growth to achieve best device performances. A robust chemical treatment is demonstrated using sulfur (S)-oleylamine (OA) solution, which etches layer by layer in an inverse epitaxial fashion and simultaneously passivates the surface. The application of this process to push the limits of top-down nanofabrication is demonstrated by the realization of InP-based high optical quality nanowire arrays, with aspect ratios more than 50, and nanostructures with new topologies. The findings are relevant for other III-V semiconductors and have potential applications in III-V device technologies.
dc.publisherWiley-VCH Verlag GMBH
dc.sourceAdvanced Functional Materials
dc.subjectKeywords: Chemical treatments; Device performance; Device technologies; II-IV semiconductors; Optical qualities; Semiconductor nanostructures; Surface passivation; Top-down fabrication; Aspect ratio; Fabrication; Membranes; Monolayers; Nanowires; Semiconductor grow membranes; monolayer etching; nanowires; semiconductor nanostructures; surface passivation; top-down fabrication
dc.titleTop-down Fabrication of High Quality III-V nanostructures by Monolayer Controlled Sculpting and Simultaneous Passivation
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume23
dc.date.issued2013
local.identifier.absfor100706 - Nanofabrication, Growth and Self Assembly
local.identifier.absfor100711 - Nanophotonics
local.identifier.absfor020504 - Photonics, Optoelectronics and Optical Communications
local.identifier.ariespublicationU3594520xPUB573
local.type.statusPublished Version
local.contributor.affiliationNaureen, S, KTH-Royal Institute of Technology
local.contributor.affiliationShahid, Naeem, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationSanatinia, Reza, KTH-Royal Institute of Technolog
local.contributor.affiliationAnand, S, KTH-Royal Institute of Technology
local.description.embargo2037-12-31
local.bibliographicCitation.issue13
local.bibliographicCitation.startpage1620
local.bibliographicCitation.lastpage1627
local.identifier.doi10.1002/adfm.201202201
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
dc.date.updated2016-02-24T10:19:54Z
local.identifier.scopusID2-s2.0-84875827561
local.identifier.thomsonID000317019100003
CollectionsANU Research Publications

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