Top-down Fabrication of High Quality III-V nanostructures by Monolayer Controlled Sculpting and Simultaneous Passivation
In the fabrication of III-V semiconductor nanostructures for electronic and optoelectronic devices, techniques that are capable of removing material with monolayer precision are as important as material growth to achieve best device performances. A robust chemical treatment is demonstrated using sulfur (S)-oleylamine (OA) solution, which etches layer by layer in an inverse epitaxial fashion and simultaneously passivates the surface. The application of this process to push the limits of top-down...[Show more]
|Collections||ANU Research Publications|
|Source:||Advanced Functional Materials|
|01_Naureen_Top-down_Fabrication_of_High_2013.pdf||1.67 MB||Adobe PDF||Request a copy|
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