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Top-down Fabrication of High Quality III-V nanostructures by Monolayer Controlled Sculpting and Simultaneous Passivation

Naureen, S; Shahid, Naeem; Sanatinia, Reza; Anand, S

Description

In the fabrication of III-V semiconductor nanostructures for electronic and optoelectronic devices, techniques that are capable of removing material with monolayer precision are as important as material growth to achieve best device performances. A robust chemical treatment is demonstrated using sulfur (S)-oleylamine (OA) solution, which etches layer by layer in an inverse epitaxial fashion and simultaneously passivates the surface. The application of this process to push the limits of top-down...[Show more]

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
URI: http://hdl.handle.net/1885/60915
Source: Advanced Functional Materials
DOI: 10.1002/adfm.201202201

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