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High Vertical yield InP nanowire gorwth on Si(111) using a thin buffer layer

Fonseka, Aruni; Tan, Hoe Hark; Wong-Leung, Yin-Yin (Jennifer); Kang, Jung-Hyun; Parkinson, Patrick; Jagadish, Chennupati

Description

We demonstrate the growth of InP nanowires on Si(111) using a thin InP buffer layer. The buffer layer is grown using a two-step procedure. The initial layer formation is ensured by using a very low growth temperature. An extremely high V/III ratio is nece

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
URI: http://hdl.handle.net/1885/60711
Source: Nanotechnology
DOI: 10.1088/0957-4484/24/46/465602

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