Skip navigation
Skip navigation

Imaging of the interstitial iron concentration in crystalline silicon by measuring the dissociation rate of iron-boron pairs

Herlufsen, Sandra; MacDonald, Daniel; Bothe, Karsten; Schmidt, Jan

Description

We present a dynamic approach for measuring the interstitial iron concentration in boron-doped crystalline silicon using photoluminescence (PL) imaging. This camera-based technique utilizes the characteristic dependence of the dissociation rate of iron-boron pairs on the interstitial iron concentration. We determine the dissociation rate by measuring the time-dependent PL signal after complete association of iron-boron pairs in the sample. Since we are only interested in the time dependence of...[Show more]

dc.contributor.authorHerlufsen, Sandra
dc.contributor.authorMacDonald, Daniel
dc.contributor.authorBothe, Karsten
dc.contributor.authorSchmidt, Jan
dc.date.accessioned2015-12-10T22:57:17Z
dc.identifier.issn1862-6254
dc.identifier.urihttp://hdl.handle.net/1885/60592
dc.description.abstractWe present a dynamic approach for measuring the interstitial iron concentration in boron-doped crystalline silicon using photoluminescence (PL) imaging. This camera-based technique utilizes the characteristic dependence of the dissociation rate of iron-boron pairs on the interstitial iron concentration. We determine the dissociation rate by measuring the time-dependent PL signal after complete association of iron-boron pairs in the sample. Since we are only interested in the time dependence of the PL signal, we are able to generate images of the interstitial iron concentration in absolute units without any calibration and without knowing the recombination properties of the interstitial iron or iron-boron pairs.
dc.publisherWiley-VCH Verlag GMBH
dc.sourcePhysica Status Solidi: Rapid Research Letters
dc.subjectKeywords: Boron-doped; Crystalline silicons; Dissociation rates; Interstitial iron; Time dependence; Time-dependent; Boron; Concentration (process); Crystalline materials; Dissociation; Iron compounds; Photoluminescence; Iron Crystalline silicon; Interstitial iron; Photoluminescence
dc.titleImaging of the interstitial iron concentration in crystalline silicon by measuring the dissociation rate of iron-boron pairs
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume6
dc.date.issued2012
local.identifier.absfor020402 - Condensed Matter Imaging
local.identifier.ariespublicationf5625xPUB550
local.type.statusPublished Version
local.contributor.affiliationHerlufsen, Sandra, Institute for Solar Energy Research Hamelin
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.contributor.affiliationBothe, Karsten, Institute for Solar Energy Research Hameln (ISFH)
local.contributor.affiliationSchmidt, Jan, College of Engineering and Computer Science, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.issue1
local.bibliographicCitation.startpage1
local.bibliographicCitation.lastpage3
local.identifier.doi10.1002/pssr.201105499
dc.date.updated2016-02-24T09:26:52Z
local.identifier.scopusID2-s2.0-83455236117
local.identifier.thomsonID000300767500002
CollectionsANU Research Publications

Download

File Description SizeFormat Image
01_Herlufsen_Imaging_of_the_interstitial_2012.pdf421.02 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator