Imaging of the interstitial iron concentration in crystalline silicon by measuring the dissociation rate of iron-boron pairs
We present a dynamic approach for measuring the interstitial iron concentration in boron-doped crystalline silicon using photoluminescence (PL) imaging. This camera-based technique utilizes the characteristic dependence of the dissociation rate of iron-boron pairs on the interstitial iron concentration. We determine the dissociation rate by measuring the time-dependent PL signal after complete association of iron-boron pairs in the sample. Since we are only interested in the time dependence of...[Show more]
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|Source:||Physica Status Solidi: Rapid Research Letters|
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