Low surface recombination velocities achieved by silicon dioxide grown electrochemically in nitric acid
This work investigates the surface passivation achieved by growing silicon dioxide (SiO2) electrochemically in concentrated nitric acid (HNO3) at room temperature, a procedure that has the potential to be significantly less ex pensive than the thermal oxides used in high-efficient solar cells and test structures. The SiO2 layers are formed by two methods: direct-current (DC) electrochemical oxidation and alternating-current (AC) electrochemical oxidation. Prior to annealing, both methods offer...[Show more]
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|Source:||Proceedings of IEEE Photovoltaic Specialists Conference (PVSC 2011)|
|01_Grant_Low_surface_recombination_2011.pdf||1.17 MB||Adobe PDF||Request a copy|
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