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Low surface recombination velocities achieved by silicon dioxide grown electrochemically in nitric acid

Grant, Nicholas; McIntosh, Keith


This work investigates the surface passivation achieved by growing silicon dioxide (SiO2) electrochemically in concentrated nitric acid (HNO3) at room temperature, a procedure that has the potential to be significantly less ex pensive than the thermal oxides used in high-efficient solar cells and test structures. The SiO2 layers are formed by two methods: direct-current (DC) electrochemical oxidation and alternating-current (AC) electrochemical oxidation. Prior to annealing, both methods offer...[Show more]

CollectionsANU Research Publications
Date published: 2011
Type: Conference paper
Source: Proceedings of IEEE Photovoltaic Specialists Conference (PVSC 2011)
DOI: 10.1109/PVSC.2011.6185918


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