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The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties

Jolley, Greg; Lu, Hao Feng; Fu, Lan; Tan, Hoe Hark; Rao Tatavarti, Sudersena; Jagadish, Chennupati


An analysis of the temperature dependent dark current and spectral response characteristics of an In0.5Ga0.5As/GaAs quantum dot solar cell has been performed to determine the dominant physical processes that lead to a reduction of the open circuit voltage compared with reference single junction GaAs solar cells.

CollectionsANU Research Publications
Date published: 2011
Type: Conference paper
Source: Proceedings of IEEE Photovoltaic Specialists Conference (PVSC 2011)
DOI: 10.1109/PVSC.2011.6186006


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