The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties
An analysis of the temperature dependent dark current and spectral response characteristics of an In0.5Ga0.5As/GaAs quantum dot solar cell has been performed to determine the dominant physical processes that lead to a reduction of the open circuit voltage compared with reference single junction GaAs solar cells.
|Collections||ANU Research Publications|
|Source:||Proceedings of IEEE Photovoltaic Specialists Conference (PVSC 2011)|
|01_Jolley_The_influence_of_InGaAs_2011.pdf||1.86 MB||Adobe PDF||Request a copy|
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