Skip navigation
Skip navigation

The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties

Jolley, Greg; Lu, Hao Feng; Fu, Lan; Tan, Hoe Hark; Rao Tatavarti, Sudersena; Jagadish, Chennupati

Description

An analysis of the temperature dependent dark current and spectral response characteristics of an In0.5Ga0.5As/GaAs quantum dot solar cell has been performed to determine the dominant physical processes that lead to a reduction of the open circuit voltage compared with reference single junction GaAs solar cells.

CollectionsANU Research Publications
Date published: 2011
Type: Conference paper
URI: http://hdl.handle.net/1885/60347
Source: Proceedings of IEEE Photovoltaic Specialists Conference (PVSC 2011)
DOI: 10.1109/PVSC.2011.6186006

Download

File Description SizeFormat Image
01_Jolley_The_influence_of_InGaAs_2011.pdf1.86 MBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  23 August 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator