The Origin of Gate Hysteresis in p-type Si-doped AIGaAs/GaAs Heterostructures
Carrad, D. J.; Burke, Anthony; Waddington, D. E. J.; Lyttleton, R. W.; Reece, Peter; Klochan, O.; Hamilton, Alexander Rudolf; Rai, A.; Reuter, D; Wieck, Andreas Dirk; Micolich, Adam Paul; Tan, Hark Hoe
Gate instability and hysteresis in Si-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We report an extended study conducted using matched n-type and p-type heterostructures, with and without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent 'leakiness' of gates on p-type heterostructures, as commonly...[Show more]
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|Source:||COMMAD 2012 Proceedings|
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