Improved performance of InGaAs/GaAs Quantum Dot Solar Cells using Si-modulation doping
N-type silicon modulation doping was introduced into the barrier layers of InGaAs/GaAs quantum dot solar cells (QDSC) at two different doping concentrations. An increased energy conversion efficiency of 8.91 % was obtained for the modulation doped device
|Collections||ANU Research Publications|
|Source:||COMMAD 2012 Proceedings|
|01_Lu_Improved_performance_of_2012.pdf||249.67 kB||Adobe PDF||Request a copy|
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