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Improved performance of InGaAs/GaAs Quantum Dot Solar Cells using Si-modulation doping

Lu, Hao Feng; Fu, Lan; Jolley, Greg; Tan, Hoe Hark; Jagadish, Chennupati


N-type silicon modulation doping was introduced into the barrier layers of InGaAs/GaAs quantum dot solar cells (QDSC) at two different doping concentrations. An increased energy conversion efficiency of 8.91 % was obtained for the modulation doped device

CollectionsANU Research Publications
Date published: 2012
Type: Conference paper
Source: COMMAD 2012 Proceedings
DOI: 10.1109/COMMAD.2012.6472393


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