Growth of defect-free InAs Nanowires using Pd catalyst
To explore the growth mechanism and the effect of non-gold catalysts in growing III-V epitaxial nanowires, InAs nanowires were grown on GaAs(111)B substrates using annealed Pd thin film as catalyst. Through detailed scanning and transmission electron microscopy (SEM/TEM) characterisations, it is found that when the catalyst size is less than 50 nm (from annealing the Pd thin film), defect-free zinc-blende structured epitaxial InAs nanowires are grown along the <110> directions with four 111...[Show more]
|Collections||ANU Research Publications|
|Source:||COMMAD 2012 Proceedings|
|01_Xu_Growth_of_defect-free_InAs_2012.pdf||295.3 kB||Adobe PDF||Request a copy|
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