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Influence of growth temperature and V/III ratio on Au-assisted In x Ga 1-x As nanowires

Ameruddin, Amira; Tan, Hoe Hark; Fonseka, Aruni; Gao, Qiang; Wong-Leung, Yin-Yin (Jennifer); Parkinson, Patrick; Breuer, Steffan; Jagadish, Chennupati


InxGa1-xAs nanowires were grown using metal-organic chemical vapour deposition (MOCVD) with various growth temperatures and V/III ratios. The morphology of these nanowires and the composition distribution along the nanowire were studied as a function of these growth parameters. With higher growth temperature and lower V/III ratio, the tapering of the nanowires is reduced. However, the incorporation of Ga in the nanowires is also reduced with lower V/III ratio. The composition distribution along...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Conference paper
Source: COMMAD 2012 Proceedings
DOI: 10.1109/COMMAD.2012.6472348


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