Skip navigation
Skip navigation

Influence of growth temperature and V/III ratio on Au-assisted In x Ga 1-x As nanowires

Ameruddin, Amira; Fonseka, Aruni; Gao, Qiang; Wong-Leung, Yin-Yin (Jennifer); Parkinson, Patrick; Breuer, Steffan; Jagadish, Chennupati; Tan, Hark Hoe


InxGa1-xAs nanowires were grown using metal-organic chemical vapour deposition (MOCVD) with various growth temperatures and V/III ratios. The morphology of these nanowires and the composition distribution along the nanowire were studied as a function of these growth parameters. With higher growth temperature and lower V/III ratio, the tapering of the nanowires is reduced. However, the incorporation of Ga in the nanowires is also reduced with lower V/III ratio. The composition distribution along...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Conference paper
Source: COMMAD 2012 Proceedings
DOI: 10.1109/COMMAD.2012.6472348


File Description SizeFormat Image
01_Ameruddin_Influence_of_growth_2012.pdf354.26 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  22 January 2019/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator