Ameruddin, Amira; Tan, Hoe Hark; Fonseka, Aruni; Gao, Qiang; Wong-Leung, Yin-Yin (Jennifer); Parkinson, Patrick; Breuer, Steffan; Jagadish, Chennupati
InxGa1-xAs nanowires were grown using metal-organic chemical vapour deposition (MOCVD) with various growth temperatures and V/III ratios. The morphology of these nanowires and the composition distribution along the nanowire were studied as a function of these growth parameters. With higher growth temperature and lower V/III ratio, the tapering of the nanowires is reduced. However, the incorporation of Ga in the nanowires is also reduced with lower V/III ratio. The composition distribution along...[Show more]
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