Influence of growth temperature and V/III ratio on Au-assisted In x Ga 1-x As nanowires
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Ameruddin, Amira; Fonseka, Aruni; Gao, Qiang; Wong-Leung, Jennifer; Parkinson, Patrick; Breuer, Steffan; Jagadish, Chennupati; Tan, Hark Hoe
Description
InxGa1-xAs nanowires were grown using metal-organic chemical vapour deposition (MOCVD) with various growth temperatures and V/III ratios. The morphology of these nanowires and the composition distribution along the nanowire were studied as a function of these growth parameters. With higher growth temperature and lower V/III ratio, the tapering of the nanowires is reduced. However, the incorporation of Ga in the nanowires is also reduced with lower V/III ratio. The composition distribution along...[Show more]
Collections | ANU Research Publications |
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Date published: | 2012 |
Type: | Conference paper |
URI: | http://hdl.handle.net/1885/60208 |
Source: | COMMAD 2012 Proceedings |
DOI: | 10.1109/COMMAD.2012.6472348 |
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