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Quantification of the zinc dopant concentration in GaAs nanowires

Burgess, Timothy; Du, S.; Gault, B.; Gao, Qiang; Zheng, Rongkun; Jagadish, Chennupati; Tan, Hark Hoe

Description

The zinc dopant concentration and distribution in GaAs nanowires is quantified by atom probe tomography. Material deposited radially by a vapour-solid process is shown to have a significantly higher dopant concentration in comparison to the core which grows by the vapour-liquid-solid process. Zinc concentrations of up to 7×1019 and 5×1020 atoms/cm3 are measured for core and shell materials respectively. Dopant activation is confirmed by electrical characterization which demonstrates an orders...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Conference paper
URI: http://hdl.handle.net/1885/60190
Source: COMMAD 2012 Proceedings
DOI: 10.1109/COMMAD.2012.6472350

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