Quantification of the zinc dopant concentration in GaAs nanowires
The zinc dopant concentration and distribution in GaAs nanowires is quantified by atom probe tomography. Material deposited radially by a vapour-solid process is shown to have a significantly higher dopant concentration in comparison to the core which grows by the vapour-liquid-solid process. Zinc concentrations of up to 7×1019 and 5×1020 atoms/cm3 are measured for core and shell materials respectively. Dopant activation is confirmed by electrical characterization which demonstrates an orders...[Show more]
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|Source:||COMMAD 2012 Proceedings|
|01_Burgess_Quantification_of_the_zinc_2012.pdf||366.72 kB||Adobe PDF||Request a copy|
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