Burgess, Timothy; Du, S.; Gault, B.; Gao, Qiang; Tan, Hoe Hark; Zheng, Rongkun; Jagadish, Chennupati
The zinc dopant concentration and distribution in GaAs nanowires is quantified by atom probe tomography. Material deposited radially by a vapour-solid process is shown to have a significantly higher dopant concentration in comparison to the core which grows by the vapour-liquid-solid process. Zinc concentrations of up to 7×1019 and 5×1020 atoms/cm3 are measured for core and shell materials respectively. Dopant activation is confirmed by electrical characterization which demonstrates an orders...[Show more]
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.