Skip navigation
Skip navigation

Quantification of the zinc dopant concentration in GaAs nanowires

Burgess, Timothy; Du, S.; Gault, B.; Gao, Qiang; Zheng, Rongkun; Jagadish, Chennupati; Tan, Hark Hoe


The zinc dopant concentration and distribution in GaAs nanowires is quantified by atom probe tomography. Material deposited radially by a vapour-solid process is shown to have a significantly higher dopant concentration in comparison to the core which grows by the vapour-liquid-solid process. Zinc concentrations of up to 7×1019 and 5×1020 atoms/cm3 are measured for core and shell materials respectively. Dopant activation is confirmed by electrical characterization which demonstrates an orders...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Conference paper
Source: COMMAD 2012 Proceedings
DOI: 10.1109/COMMAD.2012.6472350


File Description SizeFormat Image
01_Burgess_Quantification_of_the_zinc_2012.pdf366.72 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator