Skip navigation
Skip navigation

Growth of InP Nanowires on Silicon Using a Thin Buffer Layer

Fonseka, Aruni; Kang, Jung-Hyun; Paiman, Suriati; Gao, Qiang; Parkinson, Patrick; Jagadish, Chennupati; Tan, Hark Hoe


InP nanowires (NWs) are grown on Si substrate using a thin inter-mediate buffer layer. The buffer layer is grown in two steps. An initial nucleation layer is crucial to accommodate the lattice mismatch between InP and Si. A high quality 2nd layer is grown on this initial layer with smooth morphology suitable for the NW growth. More than 97% vertical yield is achieved on the buffer layer and the morphology and photoluminescence of the NWs are similar to those grown on InP(111)B substrate.

CollectionsANU Research Publications
Date published: 2012
Type: Conference paper
Source: COMMAD 2012 Proceedings
DOI: 10.1109/COMMAD.2012.6472351


File Description SizeFormat Image
01_Fonseka_Growth_of_InP_Nanowires_on_2012.pdf346.14 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator