Growth of InP Nanowires on Silicon Using a Thin Buffer Layer
-
Altmetric Citations
Fonseka, Aruni; Kang, Jung-Hyun; Paiman, Suriati; Gao, Qiang; Parkinson, Patrick; Jagadish, Chennupati; Tan, Hark Hoe
Description
InP nanowires (NWs) are grown on Si substrate using a thin inter-mediate buffer layer. The buffer layer is grown in two steps. An initial nucleation layer is crucial to accommodate the lattice mismatch between InP and Si. A high quality 2nd layer is grown on this initial layer with smooth morphology suitable for the NW growth. More than 97% vertical yield is achieved on the buffer layer and the morphology and photoluminescence of the NWs are similar to those grown on InP(111)B substrate.
Collections | ANU Research Publications |
---|---|
Date published: | 2012 |
Type: | Conference paper |
URI: | http://hdl.handle.net/1885/60171 |
Source: | COMMAD 2012 Proceedings |
DOI: | 10.1109/COMMAD.2012.6472351 |
Download
File | Description | Size | Format | Image |
---|---|---|---|---|
01_Fonseka_Growth_of_InP_Nanowires_on_2012.pdf | 346.14 kB | Adobe PDF | Request a copy |
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.
Updated: 17 November 2022/ Responsible Officer: University Librarian/ Page Contact: Library Systems & Web Coordinator