InP Nanowires Grown by SA-MOVPE
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Altmetric Citations
Gao, Qian; Fu, Lan; Parkinson, Patrick; Breuer, Steffan; Wong-Leung, Jennifer; Jagadish, Chennupati; Tan, Hark Hoe
Description
A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K.
Collections | ANU Research Publications |
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Date published: | 2012 |
Type: | Conference paper |
URI: | http://hdl.handle.net/1885/60153 |
Source: | COMMAD 2012 Proceedings |
DOI: | 10.1109/COMMAD.2012.6472352 |
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01_Gao_InP_Nanowires_Grown_by_2012.pdf | 218.42 kB | Adobe PDF | Request a copy |
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