InP Nanowires Grown by SA-MOVPE
A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K.
|Collections||ANU Research Publications|
|Source:||COMMAD 2012 Proceedings|
|01_Gao_InP_Nanowires_Grown_by_2012.pdf||218.42 kB||Adobe PDF||Request a copy|
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