Willems van Beveren, L.H.; McCallum, Jeffrey C; Jagadish, Chennupati; Tan, Hark Hoe
In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diode (LED) at liquid-Helium temperatures to be used for opto-electronic device characterization.
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.