Shell formation in InGaAs Nanowires Driven by Lattice Latching and Polarity Effect
A novel phenomenon of an asymmetric shell formation is observed within the zinc blende structured InGaAs nanowires. It is found that three Ga-rich zones are formed along <112>A directions, while three In-rich zones are formed along <112>B directio
|Collections||ANU Research Publications|
|Source:||COMMAD 2012 Proceedings|
|01_Guo_Shell_formation_in_InGaAs_2012.pdf||306.26 kB||Adobe PDF||Request a copy|
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