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Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing

Sajewicz, Pawel; Fu, Lan; Tan, Hoe Hark; Vora, Kaushal; Jagadish, Chennupati

Description

In this work, we report the use of dielectric capping layer of TiO 2 to selectively suppress thermal interdiffusion of an InGaAs/GaAs quantum well laser structure. Large differential wavelength shift of ∼ 25nm has been obtained across the same wafer bet

CollectionsANU Research Publications
Date published: 2012
Type: Conference paper
URI: http://hdl.handle.net/1885/59994
Source: COMMAD 2012 Proceedings
DOI: 10.1109/COMMAD.2012.6472398

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