Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing
In this work, we report the use of dielectric capping layer of TiO 2 to selectively suppress thermal interdiffusion of an InGaAs/GaAs quantum well laser structure. Large differential wavelength shift of ∼ 25nm has been obtained across the same wafer bet
|Collections||ANU Research Publications|
|Source:||COMMAD 2012 Proceedings|
|01_Sajewicz_Monolithically_integrated_2012.pdf||243.4 kB||Adobe PDF||Request a copy|
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