Strain Relaxation behaviour in Germanium-on-insulator fabricated by Ion Implantation
Single crystal Ge layers of different thickness were successfully formed on bulk SiO2 by ion implantation and oxidation techniques. Structural and compositional properties of the Ge layers were investigated by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. The quality of the resulting layers was found to be a function of the layer thickness.
|Collections||ANU Research Publications|
|Source:||COMMAD 2012 Proceedings|
|01_Kim_Strain_Relaxation_behaviour_in_2012.pdf||231.55 kB||Adobe PDF||Request a copy|
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