Non-linear direct-write lithography for semiconductor nanowire characterisation
A non-linear photolithography technique is presented, providing a new, rapid and damage-free method of contacting semiconductor nanowires. In addition, by using nanowires with room-temperature luminescence, a through-resist photoluminescence step provides a verifiable route to contacting high-quality wires .
|Collections||ANU Research Publications|
|Source:||COMMAD 2012 Proceedings|
|01_Parkinson_Non-linear_direct-write_2012.pdf||281.71 kB||Adobe PDF||Request a copy|
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