Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs
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Sun, W; Guo, Y.; Xu, Hong-Yi; Liao, Zhi-Ming; Zou, Jin; Gao, Qiang; Jagadish, Chennupati; Tan, Hark Hoe
Description
In the growth of GaAsP nanowires on GaAs (001) substrates, it was found that the P concentrations in the nanowires and unintentional two-dimensional (2D) GaAsP layer are different. Possible explanations are given.
Collections | ANU Research Publications |
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Date published: | 2012 |
Type: | Conference paper |
URI: | http://hdl.handle.net/1885/59784 |
Source: | COMMAD 2012 Proceedings |
DOI: | 10.1109/COMMAD.2012.6472403 |
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01_Sun_Unequal_P_distribution_in_2012.pdf | 268.86 kB | Adobe PDF | Request a copy |
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