Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs
In the growth of GaAsP nanowires on GaAs (001) substrates, it was found that the P concentrations in the nanowires and unintentional two-dimensional (2D) GaAsP layer are different. Possible explanations are given.
|Collections||ANU Research Publications|
|Source:||COMMAD 2012 Proceedings|
|01_Sun_Unequal_P_distribution_in_2012.pdf||268.86 kB||Adobe PDF||Request a copy|
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