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Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs

Sun, W; Guo, Y.; Xu, Hong-Yi; Liao, Zhi-Ming; Zou, Jin; Gao, Qiang; Jagadish, Chennupati; Tan, Hark Hoe


In the growth of GaAsP nanowires on GaAs (001) substrates, it was found that the P concentrations in the nanowires and unintentional two-dimensional (2D) GaAsP layer are different. Possible explanations are given.

CollectionsANU Research Publications
Date published: 2012
Type: Conference paper
Source: COMMAD 2012 Proceedings
DOI: 10.1109/COMMAD.2012.6472403


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