MOCVD growth of GaAs nanowires using Ga droplets
We report on growth of GaAs nanowires on Si(111) substrates using Ga droplets by metal-organic chemical vapour deposition (MOCVD). Appropriate growth conditions to achieve stabilization of small Ga droplets as well as Ga-assisted VLS growth of GaAs nanowires were found. This work facilitates comparative studies of crystalline quality and nanowire surfaces as a function of the droplet (catalyst) material.
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|Source:||COMMAD 2012 Proceedings|
|01_Breuer_MOCVD_growth_of_GaAs_nanowires_2012.pdf||272.9 kB||Adobe PDF||Request a copy|
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