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Improvement of Minority Carrier Lifetime in GaAs/Al x Gal 1-x As Core-Shell Nanowires

Jiang, Nian; Parkinson, Patrick; Gao, Qiang; Wong-Leung, Yin-Yin (Jennifer); Breuer, Steffan; Jagadish, Chennupati; Tan, Hark Hoe


GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-catalysed GaAs cores. Cross-section transmission electron microscope bright field images show that the tapering at bottom of the nanowires is mainly caused by GaAs cap growth. Time-resolved photo-luminescence measurements of single nanowires were taken at room temperature and a minority carrier lifetime of (1.02±0.43) ns was obtained for single nanowires with AlxGa1-xAs shell grown at 750°C. A...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Conference paper
Source: COMMAD 2012 Proceedings
DOI: 10.1109/COMMAD.2012.6472346


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