Skip navigation
Skip navigation
The system will be down for maintenance between 8:00 and 8:15am on Thursday 13, December 2018

The effect of annealing temperature, residual O 2 partial pressure, and ambient lfow rate on teh growth of SiO x nanowires

Yang, Yi; Shalav, Avi; Kim, Tae-Hyun; Elliman, Robert


The active oxidation of a metal-coated Si substrate offers a convenient method to grow dense silica nanowire films directly on the substrate surface. In this study we investigate the effects of temperature and O2 partial pressure in combination with different flow rates of the purging annealing gas. The flow rate is shown to have a direct effect on the onset of active oxidation and on the concentration and flux of monoxide vapor produced. Thicker nanowires are observed for increasing flow...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
Source: Applied Physics A: Materials Science and Processing
DOI: 10.1007/s00339-012-6814-9


File Description SizeFormat Image
01_Yang_The_effect_of_annealing_2012.pdf741.27 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  27 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator