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The effect of annealing temperature, residual O 2 partial pressure, and ambient lfow rate on teh growth of SiO x nanowires

Yang, Yi; Shalav, Avi; Kim, Tae-Hyun; Elliman, Robert

Description

The active oxidation of a metal-coated Si substrate offers a convenient method to grow dense silica nanowire films directly on the substrate surface. In this study we investigate the effects of temperature and O2 partial pressure in combination with different flow rates of the purging annealing gas. The flow rate is shown to have a direct effect on the onset of active oxidation and on the concentration and flux of monoxide vapor produced. Thicker nanowires are observed for increasing flow...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
URI: http://hdl.handle.net/1885/59631
Source: Applied Physics A: Materials Science and Processing
DOI: 10.1007/s00339-012-6814-9

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