Zhu, Guangyao; Gu, Shulin; Zhu, Shunming; Huang, Shimin; Gu, Ran; Ye, Jiandong; Zheng, Youdou
Metal-organic chemical vapor deposition (MOCVD) of ZnO with dimethylzinc (DMZn) and tert-butanol (t-BuOH) as Zn and oxygen precursors has been investigated and optimized in this work. Growth experiments show hydrogen addition, usually used to suppress carbon incorporation, should be kept at a low concentration due to its strong etching effect on ZnO. We found that reduction of hydrogen concentration also results in smoother films. Growth at a reactor pressure of 4-8 kPa resulted in smoother...[Show more]
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.