Xia, Hui; Lu, Shen-Yu; Li, Tian-Xin; Parkinson, Patrick; Liao, Zhi-Ming; Liu, Fu-Hao; Lu, Wei; Hu, Wei-Da; Chen, Ping Ping; Xu, Hong-Yi; Zou, Jin; Jagadish, Chennupati
The doping-dependent photoconductive properties of individual GaAs nanowires have been studied by conductive atomic force microscopy. Linear responsivity against the bias voltage is observed for moderate n-doped GaAs wires with a Schottky contact under illumination, while that of the undoped ones exhibits a saturated response. The carrier lifetime of a single nanowire can be obtained by simulating the characteristic photoelectric behavior. Consistent with the photoluminescence results, the...[Show more]
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