Skip navigation
Skip navigation

Ion implantation induced defects in ZnO

Vines, Lasse; Wong-Leung, Yin-Yin (Jennifer); Jagadish, Chennupati; Monakhov, E V; Svensson, Bengt Gunnar

Description

N-type ZnO single crystals have been implanted with 500 keV O and 1.2 MeV Zn ions using doses between 1×1011 and 2×1012cm-2, and the generation of deep-level defects in the upper part of the band gap has been studied by capacitancevoltage (CV) and deep

dc.contributor.authorVines, Lasse
dc.contributor.authorWong-Leung, Yin-Yin (Jennifer)
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorMonakhov, E V
dc.contributor.authorSvensson, Bengt Gunnar
dc.date.accessioned2015-12-10T22:53:23Z
dc.identifier.issn0921-4526
dc.identifier.urihttp://hdl.handle.net/1885/59327
dc.description.abstractN-type ZnO single crystals have been implanted with 500 keV O and 1.2 MeV Zn ions using doses between 1×1011 and 2×1012cm-2, and the generation of deep-level defects in the upper part of the band gap has been studied by capacitancevoltage (CV) and deep
dc.publisherElsevier
dc.sourcePhysica B
dc.subjectKeywords: Capacitance voltage; Conduction band edge; Deep defects; Deep energy levels; Deep-level defects; Depth distribution; Generation rate; II-VI semiconductor; Ion radiation effects; Light ion irradiation; Point defects and defect clusters; Sample temperature; Deep energy levels; IIVI semiconductors; Ion radiation effects; Point defects and defect clusters
dc.titleIon implantation induced defects in ZnO
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume407
dc.date.issued2012
local.identifier.absfor020404 - Electronic and Magnetic Properties of Condensed Matter; Superconductivity
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.ariespublicationU3594520xPUB485
local.type.statusPublished Version
local.contributor.affiliationVines, Lasse, University of Oslo
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationMonakhov, E V, University of Oslo
local.contributor.affiliationSvensson, Bengt Gunnar, University of Oslo
local.description.embargo2037-12-31
local.bibliographicCitation.startpage1471
local.bibliographicCitation.lastpage1484
local.identifier.doi10.1016/j.physb.2011.09.066
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
dc.date.updated2016-02-24T10:19:16Z
local.identifier.scopusID2-s2.0-84859157312
local.identifier.thomsonID000303149600007
CollectionsANU Research Publications

Download

File Description SizeFormat Image
01_Vines_Ion_implantation_induced_2012.pdf378.9 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator