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Ion implantation induced defects in ZnO

Vines, Lasse; Wong-Leung, Yin-Yin (Jennifer); Jagadish, Chennupati; Monakhov, E V; Svensson, Bengt Gunnar

Description

N-type ZnO single crystals have been implanted with 500 keV O and 1.2 MeV Zn ions using doses between 1×1011 and 2×1012cm-2, and the generation of deep-level defects in the upper part of the band gap has been studied by capacitancevoltage (CV) and deep

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
URI: http://hdl.handle.net/1885/59327
Source: Physica B
DOI: 10.1016/j.physb.2011.09.066

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