Skip navigation
Skip navigation

Ion implantation induced defects in ZnO

Vines, Lasse; Wong-Leung, Yin-Yin (Jennifer); Jagadish, Chennupati; Monakhov, E V; Svensson, Bengt Gunnar


N-type ZnO single crystals have been implanted with 500 keV O and 1.2 MeV Zn ions using doses between 1×1011 and 2×1012cm-2, and the generation of deep-level defects in the upper part of the band gap has been studied by capacitancevoltage (CV) and deep

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
Source: Physica B
DOI: 10.1016/j.physb.2011.09.066


File Description SizeFormat Image
01_Vines_Ion_implantation_induced_2012.pdf378.9 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator