Li, Tianfeng; Chen, Yonghai; Lei, Wen; Zhou, Xiaolong; Luo, Shuai; Hu, Yongzheng; Wang, Lijun; Yang, Tao; Wang, Zhanguo
Catalyst-free, vertical array of InAs nanowires (NWs) are grown on Si (111) substrate using MOCVD technique. The as-grown InAs NWs show a zinc-blende crystal structure along a < 111 > direction. It is found that both the density and length of InAs NWs decrease with increasing growth temperatures, while the diameter increases with increasing growth temperature, suggesting that the catalyst-free growth of InAs NWs is governed by the nucleation kinetics. The longitudinal optical and transverse...[Show more]
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