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InAs film grown on Si(111) by metalorganic Vapor Phase Epitaxy

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Caroff, Philippe; Jeppsson, Mattias; Wheeler, D; Keplinger, M; Mandl, B; Stangl, J; Seabaugh, A; Bauer, G; Wernersson, Lars-Erik

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We report the successful growth of high quality InAs films directly on Si(111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580°C for a thickness of 2 μm. We measured a high value of the electron mobili

dc.contributor.authorCaroff, Philippe
dc.contributor.authorJeppsson, Mattias
dc.contributor.authorWheeler, D
dc.contributor.authorKeplinger, M
dc.contributor.authorMandl, B
dc.contributor.authorStangl, J
dc.contributor.authorSeabaugh, A
dc.contributor.authorBauer, G
dc.contributor.authorWernersson, Lars-Erik
dc.date.accessioned2015-12-10T22:43:56Z
dc.identifier.issn1742-6588
dc.identifier.urihttp://hdl.handle.net/1885/58382
dc.description.abstractWe report the successful growth of high quality InAs films directly on Si(111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580°C for a thickness of 2 μm. We measured a high value of the electron mobili
dc.publisherAmerican Institute of Physics
dc.sourceJournal of Physics: Conference Series
dc.subjectKeywords: High quality; InAs; Layer thickness; Metal-organic vapor phase epitaxy; Morphological properties; Nucleation layers; Room temperature; Si (1 1 1); Two-step procedure; Atomic force microscopy; Crystal atomic structure; Crystal growth; Electric properties;
dc.titleInAs film grown on Si(111) by metalorganic Vapor Phase Epitaxy
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume100
dc.date.issued2008
local.identifier.absfor100706 - Nanofabrication, Growth and Self Assembly
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.ariespublicationU3488905xPUB440
local.type.statusPublished Version
local.contributor.affiliationCaroff, Philippe, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJeppsson, Mattias, Lund University
local.contributor.affiliationWheeler, D, University of Notre Dame
local.contributor.affiliationKeplinger, M, Johannes Kepler University
local.contributor.affiliationMandl, B, Lund University
local.contributor.affiliationStangl, J, Johannes Kepler University
local.contributor.affiliationSeabaugh, A, University of Notre Dame
local.contributor.affiliationBauer, G, Johannes Kepler University
local.contributor.affiliationWernersson, Lars-Erik, Lund University
local.description.embargo2037-12-31
local.bibliographicCitation.issuePart 4
local.bibliographicCitation.startpage1
local.bibliographicCitation.lastpage4
local.identifier.doi10.1088/1742-6596/100/4/042017
dc.date.updated2016-02-24T10:06:38Z
local.identifier.scopusID2-s2.0-77954346639
CollectionsANU Research Publications

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