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InAs film grown on Si(111) by metalorganic Vapor Phase Epitaxy

Caroff, Philippe; Jeppsson, Mattias; Wheeler, D; Keplinger, M; Mandl, B; Stangl, J; Seabaugh, A; Bauer, G; Wernersson, Lars-Erik

Description

We report the successful growth of high quality InAs films directly on Si(111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580°C for a thickness of 2 μm. We measured a high value of the electron mobili

CollectionsANU Research Publications
Date published: 2008
Type: Journal article
URI: http://hdl.handle.net/1885/58382
Source: Journal of Physics: Conference Series
DOI: 10.1088/1742-6596/100/4/042017

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