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Influence of oxygen on the sputtering of aluminum oxide for the surface passivation of crystallinen silicon

Li, Tsu-Tsung (Andrew); Ruffell, Simon; Tucci, Mario; Mansoulie, Yves; Samundsett, Christian; De Iullis, Simona; Serenelli, Luca; Cuevas, Andres

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While sputtering has been shown to be capable of depositing aluminum oxide suitable for surface passivation, the mechanisms for this are yet to be firmly established and its potential realized. In this paper, we investigate the relationships between the oxygen in the sputtering process to the resulting composition of the deposited film and the surface passivation obtained. We find that surface passivation is not strongly dependent on the bulk composition of the film. Instead the results...[Show more]

dc.contributor.authorLi, Tsu-Tsung (Andrew)
dc.contributor.authorRuffell, Simon
dc.contributor.authorTucci, Mario
dc.contributor.authorMansoulie, Yves
dc.contributor.authorSamundsett, Christian
dc.contributor.authorDe Iullis, Simona
dc.contributor.authorSerenelli, Luca
dc.contributor.authorCuevas, Andres
dc.date.accessioned2015-12-10T22:41:22Z
dc.identifier.issn0927-0248
dc.identifier.urihttp://hdl.handle.net/1885/57868
dc.description.abstractWhile sputtering has been shown to be capable of depositing aluminum oxide suitable for surface passivation, the mechanisms for this are yet to be firmly established and its potential realized. In this paper, we investigate the relationships between the oxygen in the sputtering process to the resulting composition of the deposited film and the surface passivation obtained. We find that surface passivation is not strongly dependent on the bulk composition of the film. Instead the results indicate that the interfacial silicon oxide layer that forms after annealing between the aluminum oxide film and the silicon is a much more important factor; it is this combined structure of aluminum oxide, silicon oxide and silicon that is crucial for obtaining negative charges and excellent surface passivation.
dc.publisherElsevier
dc.sourceSolar Energy Materials and Solar Cells
dc.subjectKeywords: Aluminum oxide films; Aluminum oxides; Bulk compositions; Combined structure; Crystalline silicons; Deposited films; Influence of oxygen; Negative charge; Silicon oxide layers; Sputtering process; Surface passivation; Aluminum; Oxide films; Oxygen; Silico Aluminum oxide; Sputtering; Surface passivation
dc.titleInfluence of oxygen on the sputtering of aluminum oxide for the surface passivation of crystallinen silicon
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume95
dc.date.issued2011
local.identifier.absfor090603 - Industrial Electronics
local.identifier.ariespublicationu4334215xPUB418
local.type.statusPublished Version
local.contributor.affiliationLi, Tsu-Tsung (Andrew), College of Engineering and Computer Science, ANU
local.contributor.affiliationRuffell, Simon, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTucci, Mario, ENEA Research Center Casaccia
local.contributor.affiliationMansoulie, Yves, Grand Voie des Vignes
local.contributor.affiliationSamundsett, Christian, College of Engineering and Computer Science, ANU
local.contributor.affiliationDe Iullis, Simona, ENEA Research Center Casaccia
local.contributor.affiliationSerenelli, Luca, ENEA Research Center Casaccia
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.issue1
local.bibliographicCitation.startpage69
local.bibliographicCitation.lastpage72
local.identifier.doi10.1016/j.solmat.2010.03.034
dc.date.updated2016-02-24T11:00:38Z
local.identifier.scopusID2-s2.0-78149362339
local.identifier.thomsonID000287013800019
CollectionsANU Research Publications

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