Skip navigation
Skip navigation
The system will be down for maintenance between 8:00 and 8:15am on Thursday 13, December 2018

Passivation of a (100) Silicon Surface by Silicon Dioxide Grown in Nitric Acid

Grant, Nicholas; McIntosh, Keith

Description

This letter investigates silicon dioxide layers grown at low temperature in concentrated nitric acid using a two-step process developed by Imai et al for thin-film transistors. With photoconductance measurements, we find that, prior to an anneal, nitric acid oxidation does not passivate the silicon surface, but, after a 30-min nitrogen anneal at 1100 °C, a surface recombination velocity (SRV) of 107 cm/s (at Δn = 1015 cm-3) is attained on 1-Ω · cm n-type silicon. The SRV is further decreased to...[Show more]

CollectionsANU Research Publications
Date published: 2009
Type: Journal article
URI: http://hdl.handle.net/1885/57795
Source: IEEE Electron Device Letters
DOI: 10.1109/LED.2009.2025898

Download

File Description SizeFormat Image
01_Grant_Passivation_of_a_(100)_Silicon_2009.pdf121.3 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  27 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator