Grant, Nicholas; McIntosh, Keith
This letter investigates silicon dioxide layers grown at low temperature in concentrated nitric acid using a two-step process developed by Imai et al for thin-film transistors. With photoconductance measurements, we find that, prior to an anneal, nitric acid oxidation does not passivate the silicon surface, but, after a 30-min nitrogen anneal at 1100 °C, a surface recombination velocity (SRV) of 107 cm/s (at Δn = 1015 cm-3) is attained on 1-Ω · cm n-type silicon. The SRV is further decreased to...[Show more]
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