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The effect of exposure of Si-Si02 structure to atomic H by PECVD reactor

Zhang, Chun; Weber, Klaus; Jin, Hao; Zin, Ngwe Soe

Description

The effect of H plasma exposure parameters, such as power, pressure and temperature, on the Si-SiO2 interface is investigated. Inductively coupled photoconductivity decay measurements indicate an increase in carrier recombination at the surfaces following atomic hydrogen exposure, as measured by an increase in the emitter saturation current density. This increase is chiefly due to the generation of additional, recombination active defects. These defects are not thermally stable and are removed...[Show more]

dc.contributor.authorZhang, Chun
dc.contributor.authorWeber, Klaus
dc.contributor.authorJin, Hao
dc.contributor.authorZin, Ngwe Soe
dc.coverage.spatialPhiladelphia USA
dc.date.accessioned2015-12-10T22:41:06Z
dc.date.createdJune 7-12 2009
dc.identifier.isbn9781424429509
dc.identifier.urihttp://hdl.handle.net/1885/57746
dc.description.abstractThe effect of H plasma exposure parameters, such as power, pressure and temperature, on the Si-SiO2 interface is investigated. Inductively coupled photoconductivity decay measurements indicate an increase in carrier recombination at the surfaces following atomic hydrogen exposure, as measured by an increase in the emitter saturation current density. This increase is chiefly due to the generation of additional, recombination active defects. These defects are not thermally stable and are removed by subsequent thermal treatments above 300°C in N2. In addition, atomic hydrogen results in the passivation of a certain fraction of thermally stable interface defects. However, the fraction of defects passivated is always lower than can be achieved by exposure to molecular hydrogen. Variation of sample temperature during atomic H exposure in the range 25-400°C does not have a significant impact on the passivation efficiency.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesIEEE Photovoltaic Specialists Conference (PVSC 2009)
dc.sourceProceedings of IEEE Photovoltaic Specialists Conference (PVSC 2009)
dc.subjectKeywords: Active defects; Atomic hydrogen; Carrier recombination; Emitter saturation current density; H plasma; Inductively-coupled; Interface defects; Molecular hydrogen; Photoconductivity decay; Plasma exposure; Pressure and temperature; Sample temperature; Signi Defects; H plasma; Si-SiO2
dc.titleThe effect of exposure of Si-Si02 structure to atomic H by PECVD reactor
dc.typeConference paper
local.description.notesImported from ARIES
local.description.refereedYes
dc.date.issued2009
local.identifier.absfor090608 - Renewable Power and Energy Systems Engineering (excl. Solar Cells)
local.identifier.ariespublicationu4334215xPUB413
local.type.statusPublished Version
local.contributor.affiliationZhang, Chun, College of Engineering and Computer Science, ANU
local.contributor.affiliationWeber, Klaus, College of Engineering and Computer Science, ANU
local.contributor.affiliationJin, Hao, College of Engineering and Computer Science, ANU
local.contributor.affiliationZin, Ngwe Soe, College of Engineering and Computer Science, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.startpage000164
local.bibliographicCitation.lastpage000168
local.identifier.doi10.1109/PVSC.2009.5411704
dc.date.updated2016-02-24T11:00:36Z
local.identifier.scopusID2-s2.0-77951573942
CollectionsANU Research Publications

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