Passivation and depassivation of Si-SiO 2 interfaces with atomic hydrogen
The influence of atomic hydrogen on the surface passivation of the Si-SiO2 interface is investigated. Inductively coupled photoconductivity decay measurements indicate an increase in carrier recombination at the surfaces following atomic hydrogen exposure, as measured by an increase in the emitter saturation current density. These defects are not thermally stable and are removed by subsequent thermal treatments above 300°C in N2. Atomic hydrogen results in the passivation of a certain fraction...[Show more]
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|Source:||Journal of the Electrochemical Society|
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