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Displacive disorder and dielectric relaxation in the stoichiometric bismuth-containing pyrochlores, Bi 2 M III NbO 7 (M = In and Sc).

Liu, Yun; Withers, Raymond; Nguyen, Hai Binh; Elliott, Kim; Qijun, Ren; Zhanghai, Chen

Description

The structural disorder and temperature-dependent dielectric properties of two Bi-based niobate pyrochlore systems which have both previously been reported to occur at the ideal Bi2(MIIINbV)O7 stoichiometry without any compositional disorder on the pyrochlore A site, namely the Bi2InNbO7 (BIN) and Bi2ScNbO7 (BSN) pyrochlore systems, have been carefully re-investigated. It is established that A site stoichiometric, Bi-based niobate pyrochlores can indeed exist. Electron diffraction is used to...[Show more]

CollectionsANU Research Publications
Date published: 2009
Type: Journal article
URI: http://hdl.handle.net/1885/57716
Source: Journal of Solid State Chemistry
DOI: 10.1016/j.jssc.2009.07.007

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