Strain Relaxation in Germanium-on-Insulator fabricated by a modified Germanium Condensation
Germanium-on-insulator (GeOI) is a promising platform for silicon-based photonics as well as microelectronics. In this work a modified Ge-condensation technique in which Ge ions were implanted into a top silicon layer was proposed. Through a cyclic dry oxidation and annealing steps, ~20 nm thick, single crystalline Ge layer could be obtained. X-ray diffraction and Raman scattering analyses also confirmed that the layer was fully-relaxed, which is desirable for the integration of Ge, GaAs, and...[Show more]
|Collections||ANU Research Publications|
|Source:||2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings|
|01_Choi_Strain_Relaxation_in_2010.pdf||888.38 kB||Adobe PDF||Request a copy|
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