Choi, Duk-Yong; Luther-Davies, Barry; Kim, Tae-Hyun; Belay, Kidane; Llewellyn, David; Elliman, Robert
Germanium-on-insulator (GeOI) is a promising platform for silicon-based photonics as well as microelectronics. In this work a modified Ge-condensation technique in which Ge ions were implanted into a top silicon layer was proposed. Through a cyclic dry oxidation and annealing steps, ~20 nm thick, single crystalline Ge layer could be obtained. X-ray diffraction and Raman scattering analyses also confirmed that the layer was fully-relaxed, which is desirable for the integration of Ge, GaAs, and...[Show more]
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