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Strain Relaxation in Germanium-on-Insulator fabricated by a modified Germanium Condensation

Choi, Duk-Yong; Luther-Davies, Barry; Kim, Tae-Hyun; Belay, Kidane; Llewellyn, David; Elliman, Robert

Description

Germanium-on-insulator (GeOI) is a promising platform for silicon-based photonics as well as microelectronics. In this work a modified Ge-condensation technique in which Ge ions were implanted into a top silicon layer was proposed. Through a cyclic dry oxidation and annealing steps, ~20 nm thick, single crystalline Ge layer could be obtained. X-ray diffraction and Raman scattering analyses also confirmed that the layer was fully-relaxed, which is desirable for the integration of Ge, GaAs, and...[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Conference paper
URI: http://hdl.handle.net/1885/57420
Source: 2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
DOI: 10.1109/COMMAD.2010.5699714

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