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Quantifying carrier recombination at grain boundaries in multicrystalline silicon wafers through photoluminescence imaging

Sio, Hang Cheong (Kelvin); Trupke, T; MacDonald, Daniel


We present a method based on steady state photoluminescence (PL) imaging and modelling of the PL intensity profile across a grain boundary (GB) using 2D finite element analysis, to quantify the recombination strength of a GB in terms of the effective surface recombination velocity (S e f f). This quantity is a more meaningful and absolute measure of the recombination activity of a GB compared to the commonly used signal contrast, which can strongly depend on other sample parameters, such as the...[Show more]

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.4904963


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