Quantifying carrier recombination at grain boundaries in multicrystalline silicon wafers through photoluminescence imaging
We present a method based on steady state photoluminescence (PL) imaging and modelling of the PL intensity profile across a grain boundary (GB) using 2D finite element analysis, to quantify the recombination strength of a GB in terms of the effective surface recombination velocity (S e f f). This quantity is a more meaningful and absolute measure of the recombination activity of a GB compared to the commonly used signal contrast, which can strongly depend on other sample parameters, such as the...[Show more]
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|Source:||Journal of Applied Physics|
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