Skip navigation
Skip navigation

Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers

Jung, Jae Hun; Yoon, Hyun Sik; Kim, Yu Lee; Song, Man Suk; Kim, Yong; Chen, Zhi Gang; Zou, Jin; Kang, Jung-Hyun; Joyce, Hannah J.; Gao, Qiang; Jagadish, Chennupati; Tan, Hark Hoe; Choi, Duk-Yong


We demonstrate a method to realize vertically oriented Ge nanowires on Si(111) substrates. Ge nanowires were grown by chemical vapor deposition using Au nanoparticles to seed nanowire growth via a vapor-liquid-solid growth mechanism. Rapid oxidation of Si during Au nanoparticle application inhibits the growth of vertically oriented Ge nanowires directly on Si. The present method employs thin Ge buffer layers grown at low temperature less than 600 °C to circumvent the oxidation problem. By using...[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
Source: Nanotechnology
DOI: 10.1088/0957-4484/21/29/295602


File Description SizeFormat Image
01_Jung_Vertically_oriented_epitaxial_2010.pdf3.21 MBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  17 November 2022/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator