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Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers

Jung, Jae Hun; Yoon, Hyun Sik; Kim, Yu Lee; Song, Man Suk; Kim, Yong; Chen, Zhi Gang; Zou, Jin; Choi, Duk-Yong; Kang, Jung-Hyun; Joyce, Hannah J; Gao, Qiang; Tan, Hoe Hark; Jagadish, Chennupati

Description

We demonstrate a method to realize vertically oriented Ge nanowires on Si(111) substrates. Ge nanowires were grown by chemical vapor deposition using Au nanoparticles to seed nanowire growth via a vapor-liquid-solid growth mechanism. Rapid oxidation of Si during Au nanoparticle application inhibits the growth of vertically oriented Ge nanowires directly on Si. The present method employs thin Ge buffer layers grown at low temperature less than 600 °C to circumvent the oxidation problem. By using...[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
URI: http://hdl.handle.net/1885/56940
Source: Nanotechnology
DOI: 10.1088/0957-4484/21/29/295602

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