Characterization of the Si-SiO 2 Interface Following Room Temperature Ammonia Plasma Exposure
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Jin, Hao; Weber, Klaus; Smith, Paul
Description
The electrical properties of the Si- SiO2 interface following nitridation by ammonia plasma exposure at room temperature indicate that a high density of interface defects and charges is generated by the plasma exposure. Combined high-frequency and quasistatic capacitance-voltage measurements show a dramatic increase in the midgap defect density and interface charge, while quasi-steady-state photoconductivity decay measurements indicate a large increase in carrier recombination at the surfaces,...[Show more]
Collections | ANU Research Publications |
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Date published: | 2007 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/56921 |
Source: | Journal of the Electrochemical Society |
DOI: | 10.1149/1.2716554 |
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01_Jin_Characterization_of_the_Si-SiO_2007.pdf | 168.14 kB | Adobe PDF | Request a copy |
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