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Characterization of the Si-SiO 2 Interface Following Room Temperature Ammonia Plasma Exposure

Jin, Hao; Weber, Klaus; Smith, Paul

Description

The electrical properties of the Si- SiO2 interface following nitridation by ammonia plasma exposure at room temperature indicate that a high density of interface defects and charges is generated by the plasma exposure. Combined high-frequency and quasistatic capacitance-voltage measurements show a dramatic increase in the midgap defect density and interface charge, while quasi-steady-state photoconductivity decay measurements indicate a large increase in carrier recombination at the surfaces,...[Show more]

CollectionsANU Research Publications
Date published: 2007
Type: Journal article
URI: http://hdl.handle.net/1885/56921
Source: Journal of the Electrochemical Society
DOI: 10.1149/1.2716554

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