Characterization of the Si-SiO 2 Interface Following Room Temperature Ammonia Plasma Exposure
The electrical properties of the Si- SiO2 interface following nitridation by ammonia plasma exposure at room temperature indicate that a high density of interface defects and charges is generated by the plasma exposure. Combined high-frequency and quasistatic capacitance-voltage measurements show a dramatic increase in the midgap defect density and interface charge, while quasi-steady-state photoconductivity decay measurements indicate a large increase in carrier recombination at the surfaces,...[Show more]
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|Source:||Journal of the Electrochemical Society|
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