Jin, Hao; Weber, Klaus; Blakers, Andrew
The bonded hydrogen concentration in thermally annealed low-pressure chemical vapor deposition (LPCVD) Si3 N4 films increases rapidly following exposure to ammonia plasma and saturates at a concentration determined by the thermal history of the films. Where the nitride layer is deposited on oxidized silicon samples, the introduction of hydrogen into the nitride film using ammonia plasma is effective at passivating the Si- SiO2 interface. The plasma treatment does not lead to the generation of a...[Show more]
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