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Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer

Tianfeng, Li; Chen, Yonghai; Lei, Wen; Zhou, Xiaolong; Wang, Zhanguo

Description

This paper presents a comparative study on the optical properties of both type-I and type-II InAsSb/InGaAsSb nanostructures on InP substrates. A type-I band alignment is observed for InAsSb/InGaAsSb heterostructure when the Sb composition in InGaAsSb layers is 10%, while a type-II band alignment is observed for the InAsSb/InGaAsSb heterostructures when the Sb composition in InGaAsSb layers is higher than 10%. And, besides their long emission wavelength (around 2 μm), the...[Show more]

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
URI: http://hdl.handle.net/1885/56471
Source: Physica E
DOI: 10.1016/j.physe.2010.11.010

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