Surface Topography in Mechanical Polishing of 6H-SiC (0001) Substrate
Silicon carbide (SiC) single crystals have been used as the substrates of a new generation of wide band-gap semiconductors due to their unparalleled combination of high breakdown voltage, extreme temperature tolerance, mobility and radiation hardness. For their applications, the SiC substrates need to be machined with nanometric surface quality as well as high form accuracy. However, the superior properties of the materials render their machinability extremely difficult. In this paper, we...[Show more]
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