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The effect of ion-implantation on the resistive switching response of NiO thin films

dc.contributor.authorSaleh, M.N.
dc.contributor.authorVenkatachalam, Dinesh
dc.contributor.authorKim, Sung-I
dc.contributor.authorBelay, Kidane
dc.contributor.authorElliman, Robert
dc.coverage.spatialLucas Heights Australia
dc.date.accessioned2015-12-10T22:32:54Z
dc.date.createdNovember 25-27 2009
dc.identifier.isbn9780975843486
dc.identifier.urihttp://hdl.handle.net/1885/55985
dc.publisherAustralian Institute of Nuclear Science and Engineering (AINSE)
dc.relation.ispartofseriesAINSE Conference on Nuclear and Complementary Techniques of Analysis (NCTA 2009)
dc.sourceProceedings of the 16th AINSE Conference on Nuclear and Complementary Techniques of Analysis
dc.titleThe effect of ion-implantation on the resistive switching response of NiO thin films
dc.typeConference paper
local.description.notesImported from ARIES
local.description.refereedYes
dc.date.issued2010
local.identifier.absfor020299 - Atomic, Molecular, Nuclear, Particle and Plasma Physics not elsewhere classified
local.identifier.ariespublicationu1408929xPUB347
local.type.statusPublished Version
local.contributor.affiliationSaleh, M.N., University Yaounde
local.contributor.affiliationVenkatachalam, Dinesh, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKim, Sung-I, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBelay, Kidane, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.startpage4
dc.date.updated2015-12-09T10:20:31Z
CollectionsANU Research Publications

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