Skip navigation
Skip navigation

Evidence for vacancy-related recombination active defects in as-grown N-type czochralski silicon

Zheng, Peiting; Rougieux, Fiacre; Grant, Nicholas; MacDonald, Daniel


A recombination of active defect in very high lifetime Czochralski grown n-type silicon wafers, which can be thermally deactivated at 150 °C, is described. In addition, the existence of a recently measured defect, which is deactivated at 350 °C, is conf

CollectionsANU Research Publications
Date published: 2015
Type: Journal article
Source: IEEE Journal of Photovoltaics
DOI: 10.1109/JPHOTOV.2014.2366687


File Description SizeFormat Image
01_Zheng_Evidence_for_vacancy-related_2015.pdf1.12 MBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  12 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator