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Evidence for vacancy-related recombination active defects in as-grown N-type czochralski silicon

Zheng, Peiting; Rougieux, Fiacre; Grant, Nicholas; MacDonald, Daniel

Description

A recombination of active defect in very high lifetime Czochralski grown n-type silicon wafers, which can be thermally deactivated at 150 °C, is described. In addition, the existence of a recently measured defect, which is deactivated at 350 °C, is conf

CollectionsANU Research Publications
Date published: 2015
Type: Journal article
URI: http://hdl.handle.net/1885/55413
Source: IEEE Journal of Photovoltaics
DOI: 10.1109/JPHOTOV.2014.2366687

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