Evidence for vacancy-related recombination active defects in as-grown N-type czochralski silicon
A recombination of active defect in very high lifetime Czochralski grown n-type silicon wafers, which can be thermally deactivated at 150 °C, is described. In addition, the existence of a recently measured defect, which is deactivated at 350 °C, is conf
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|Source:||IEEE Journal of Photovoltaics|
|01_Zheng_Evidence_for_vacancy-related_2015.pdf||1.12 MB||Adobe PDF||Request a copy|
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