Hickey, D P; Jones, K S; Elliman, Robert
The amorphization and graphitization of single-crystal diamond by ion implantation were explored using transmission electron microscopy (TEM). The effect of ion implantation and annealing on the microstructure was studied in (100) diamond substrates Si+ implanted at 1 MeV. At a dose of 1 × 1015 cm- 2, implants done at 77 K showed a damage layer that evolves into amorphous pockets upon annealing at 1350 °C for 24 h whereas room temperature implants (303 K) recovered to the original defect free...[Show more]
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