Alloy phase separation in InAs/InAlAs/InP nanostructure superlattices studied by finite element calculation
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Lei, Wen; Ren, Yongling; Wang, Y L; Li, Qing
Description
The alloy phase separation effect in InAlAs spacer layer of InAs/InAlAs nanostructure superlattices was studied by two-dimensional finite element calculation. The calculation results showed that InAs islands with wide top would prefer to induce "V"-like In-rich InAlAs arms above InAs islands in InAlAs spacer layer, while InAs islands with narrow top would promote the formation of "I"-like In-rich InAlAs arms above InAs islands in InAlAs spacer layer which corresponded well with the experimental...[Show more]
dc.contributor.author | Lei, Wen | |
---|---|---|
dc.contributor.author | Ren, Yongling | |
dc.contributor.author | Wang, Y L | |
dc.contributor.author | Li, Qing | |
dc.date.accessioned | 2015-12-10T22:30:58Z | |
dc.identifier.issn | 0022-0248 | |
dc.identifier.uri | http://hdl.handle.net/1885/55325 | |
dc.description.abstract | The alloy phase separation effect in InAlAs spacer layer of InAs/InAlAs nanostructure superlattices was studied by two-dimensional finite element calculation. The calculation results showed that InAs islands with wide top would prefer to induce "V"-like In-rich InAlAs arms above InAs islands in InAlAs spacer layer, while InAs islands with narrow top would promote the formation of "I"-like In-rich InAlAs arms above InAs islands in InAlAs spacer layer which corresponded well with the experimental results reported in Ref. [9]. | |
dc.publisher | Elsevier | |
dc.source | Journal of Crystal Growth | |
dc.subject | Keywords: A1. Alloy phase separation; A1. Nanostructures; A3. Molecular beam epitaxy; B2. InAs/InAlAs; B2: Semiconducting III-V materials; Alloys; Crystal growth; Indium arsenide; Molecular beam epitaxy; Molecular beams; Nanostructures; Phase modulation; Semiconduc A1. Alloy phase separation; A1. Nanostructures; A3. Molecular beam epitaxy; B2. InAs/InAlAs; B2: Semiconducting III-V materials | |
dc.title | Alloy phase separation in InAs/InAlAs/InP nanostructure superlattices studied by finite element calculation | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.identifier.citationvolume | 311 | |
dc.date.issued | 2009 | |
local.identifier.absfor | 040306 - Mineralogy and Crystallography | |
local.identifier.ariespublication | u4222028xPUB325 | |
local.type.status | Published Version | |
local.contributor.affiliation | Lei, Wen, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Ren, Yongling, College of Engineering and Computer Science, ANU | |
local.contributor.affiliation | Wang, Y L, Beijing Tongmei Xtal Technology Co. Ltd | |
local.contributor.affiliation | Li, Qing, College of Physical and Mathematical Sciences, ANU | |
local.description.embargo | 2037-12-31 | |
local.bibliographicCitation.issue | 22 | |
local.bibliographicCitation.startpage | 4632 | |
local.bibliographicCitation.lastpage | 4635 | |
local.identifier.doi | 10.1016/j.jcrysgro.2009.08.004 | |
dc.date.updated | 2016-02-24T10:46:14Z | |
local.identifier.scopusID | 2-s2.0-70350221964 | |
Collections | ANU Research Publications |
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